Heater
|
Project |
metal heater |
ceramic heater (aluminum nitride) |
HBM Pulse Heater |
HBM stage heater |
|
Material Composition |
Aluminum (Al) |
AlN (aluminum nitride) |
SiC (Silicon Carbide) |
AlN (aluminum nitride) |
|
working temperature |
< 450 ℃ |
< 700 ℃ |
room temperature ~ 400°C |
< 150 ℃ |
|
heating rate |
fast. |
|
(<300°C/sec) |
General |
|
cooling capacity |
General |
General |
extremely fast |
General |
|
thermal conductivity |
high |
(170W/mK) |
high |
high |
|
temperature uniformity |
good |
|
|
± 1% @ 100 ℃ |
|
temperature accuracy |
|
good ~ excellent |
|
high |
|
flatness |
General |
high |
high |
<10 μm() |
|
plasma tolerance |
General |
|
is not applicable |
is not applicable |
|
vacuum function |
None |
optional |
None |
with (Vacuum Chuck) |
|
Application areas |
CVD / ALD/ashing |
CVD / ALD/diffusion/annealing |
TCB bonding |
TCB Wafer Preheating |
|
Applicable process |
Pre-Process (FEOL) |
Pre-Process (FEOL) |
Post-Process (Advanced Packaging) |
Post-Process (Advanced Packaging) |
|
technical barriers |
General |
high |
|
|
|
is a consumable part |
No |
No |
No |
No |
|
Cost Level |
cheap ~ average |
fair ~ high |
high |
high |
|
Import Timing |
equipment |
high temperature thin film process |
HBM Diffusion |
HBM Diffusion |
