Electrode and Focus Ring Electrode
|
classification |
Electrode electrode |
Focus Ring |
|
|
etching equipment for carrying the wafer and applying RF power. In the plasma etching process, ions are imparted with directional energy by RF bias. |
at the periphery of the electrode, surrounding the edge of the wafer. By correcting the edge electric field distortion, the etching uniformity is improved. |
|
working principle |
Source RF Forming Plasma electrodes RF electric field to form vertical electric field ions are accelerated in the vertical direction and hit the wafer surface & rarr; to achieve anisotropic etching used in power-on state |
Correction of the Edge Effect of Plasma Diffusion to the Wafer Edge -regulated ion trajectories compensation for fringe electric field leakage maintain the uniformity of plasma density and ion energy |
|
Applicable process |
plasma etching |
|
|
replacement cycle |
is not a conventional RF consumable and is a long-life component logic process: about 1~3 years replacement storage process (high power etching): about 1~2 years replacement |
Typical Consumable Parts silicon material: about 300~800 wafers silicon carbide material: about 600~2000 wafers special coating type: about 1000~3000 wafers |
|
Customer Value |
stable ion energy control Improve Anisotropic Etching Accuracy ensures long-term process stability |
improve edge critical dimension uniformity Minimize Edge Over-Etching/Under-Etching Improve process yield and reduce defects |
